Invention Grant
US09356191B2 Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same
有权
具有用于分离生长衬底的空隙的外延层晶片和使用其形成的半导体器件
- Patent Title: Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same
- Patent Title (中): 具有用于分离生长衬底的空隙的外延层晶片和使用其形成的半导体器件
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Application No.: US14726031Application Date: 2015-05-29
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Publication No.: US09356191B2Publication Date: 2016-05-31
- Inventor: Jong Min Jang , Kyu Ho Lee , Chang Suk Han , Hwa Mok Kim , Daewoong Suh , Chi Hyun In , Jong Hyeon Chae
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2012-0146329 20121214; KR10-2012-0150389 20121221
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L21/02 ; H01L29/06 ; H01L33/00 ; H01L33/20 ; H01L33/24 ; H01L33/32
Abstract:
An epitaxial wafer includes a growth substrate, a mask pattern disposed on the growth substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern and including a first void disposed on the masking region. The first void includes a lower void disposed between a lower surface of the epitaxial layer and the masking region, and an upper void extending from the lower void into the epitaxial layer, the lower void having a greater width than the upper void.
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