Invention Grant
US09361982B2 Embedded non-volatile memory with single polysilicon layer memory cells programmable through band-to-band tunneling-induced hot electron and erasable through fowler-nordheim tunneling
有权
嵌入式非易失性存储器，单个多晶硅层存储单元，可通过带 - 带隧道诱导的热电子可编程，并可通过fowler-nordheim隧道进行擦除
- Patent Title: Embedded non-volatile memory with single polysilicon layer memory cells programmable through band-to-band tunneling-induced hot electron and erasable through fowler-nordheim tunneling
- Patent Title (中): 嵌入式非易失性存储器，单个多晶硅层存储单元，可通过带 - 带隧道诱导的热电子可编程，并可通过fowler-nordheim隧道进行擦除
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Application No.: US14605350Application Date: 2015-01-26
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Publication No.: US09361982B2Publication Date: 2016-06-07
- Inventor: Luca Milani , Fabrizio Torricelli , Anna Richelli , Luigi Colalongo , Zsolt Miklos Kovàcs-Vajna
- Applicant: STMICROELECTRONICS S.r.l.
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: ITMI2014A0155 20140204
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/04 ; G11C16/26 ; H01L27/115 ; H01L21/28 ; H01L29/788 ; H01L29/66
Abstract:
A non-volatile memory includes a plurality of memory cells arranged in a plurality of rows and columns. Each memory cell includes a read portion and a control portion. The read portion and the control portion share an electrically floating layer of conductive material defining a first capacitive coupling with the read portion and a second capacitive coupling with the control portion. The first capacitive coupling defines a first capacity greater than a second capacity defined by the second capacitive coupling. The control portion is configured so that an electric current injects or extracts charge carriers into or from the electrically floating layer to store of a first logic value or a second logic value, respectively, in the memory cell.
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