Invention Grant
- Patent Title: Plasma enhanced chemical vapor deposition (PECVD) source
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Application No.: US14138833Application Date: 2013-12-23
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Publication No.: US09362093B2Publication Date: 2016-06-07
- Inventor: Daniel Theodore Crowley , Patrick Lawrence Morse , William A. Meredith, Jr. , John Robert German , Michelle Lynn Neal
- Applicant: Sputtering Components, Inc.
- Applicant Address: US MN Owatonna
- Assignee: Sputtering Components, Inc.
- Current Assignee: Sputtering Components, Inc.
- Current Assignee Address: US MN Owatonna
- Agency: Fogg & Powers LLC
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H05B31/26 ; H01J37/34

Abstract:
One embodiment is directed to a plasma source comprising a body in which a cavity is formed and at least two self-contained magnetron assemblies disposed within the cavity. The magnetron assemblies are mutually electrically isolated from each other and from the body. In one implementation of such an embodiment, the self-contained magnetron assemblies comprise closed-drift magnetron assemblies. Other embodiments are disclosed.
Public/Granted literature
- US09406487B2 Plasma enhanced chemical vapor deposition (PECVD) source Public/Granted day:2016-08-02
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