Invention Grant
- Patent Title: Semiconductor devices with a thermally conductive layer and methods of their fabrication
- Patent Title (中): 具有导热层的半导体器件及其制造方法
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Application No.: US14249538Application Date: 2014-04-10
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Publication No.: US09362198B2Publication Date: 2016-06-07
- Inventor: Lakshminarayan Viswanathan , Bruce M. Green , Darrell G. Hill , L M Mahalingam
- Applicant: Lakshminarayan Viswanathan , Bruce M. Green , Darrell G. Hill , L M Mahalingam
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Agent Bruce M. Green
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L23/367 ; H01L21/762 ; H01L21/3205 ; H01L21/04 ; H01L21/28 ; H01L29/778 ; H01L29/66 ; H01L29/417 ; H01L29/20
Abstract:
An embodiment of a semiconductor device includes a semiconductor substrate that includes a host substrate and an upper surface, an active area, a substrate opening in the semiconductor substrate that is partially defined by a recessed surface, and a thermally conductive layer disposed over the semiconductor substrate that extends between the recessed surface and a portion of the semiconductor substrate within the active area. A method for fabricating the semiconductor device includes defining an active area, forming a gate electrode over a channel in the active area, forming a source electrode and a drain electrode in the active area on opposite sides of the gate electrode, etching a substrate opening in the semiconductor substrate that is partially defined by the recessed surface, and depositing a thermally conductive layer over the semiconductor substrate that extends between the recessed surface and a portion of the semiconductor substrate over the channel.
Public/Granted literature
- US20150294921A1 SEMICONDUCTOR DEVICES WITH A THERMALLY CONDUCTIVE LAYER AND METHODS OF THEIR FABRICATION Public/Granted day:2015-10-15
Information query
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