发明授权
- 专利标题： Semiconductor devices with a thermally conductive layer and methods of their fabrication
- 专利标题（中）： 具有导热层的半导体器件及其制造方法
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申请号： US14249538申请日： 2014-04-10
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公开(公告)号： US09362198B2公开(公告)日： 2016-06-07
- 发明人: Lakshminarayan Viswanathan , Bruce M. Green , Darrell G. Hill , L M Mahalingam
- 申请人： Lakshminarayan Viswanathan , Bruce M. Green , Darrell G. Hill , L M Mahalingam
- 申请人地址： US TX Austin
- 专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址： US TX Austin
- 代理商 Bruce M. Green
- 主分类号： H01L31/102
- IPC分类号： H01L31/102 ; H01L23/367 ; H01L21/762 ; H01L21/3205 ; H01L21/04 ; H01L21/28 ; H01L29/778 ; H01L29/66 ; H01L29/417 ; H01L29/20
摘要：
An embodiment of a semiconductor device includes a semiconductor substrate that includes a host substrate and an upper surface, an active area, a substrate opening in the semiconductor substrate that is partially defined by a recessed surface, and a thermally conductive layer disposed over the semiconductor substrate that extends between the recessed surface and a portion of the semiconductor substrate within the active area. A method for fabricating the semiconductor device includes defining an active area, forming a gate electrode over a channel in the active area, forming a source electrode and a drain electrode in the active area on opposite sides of the gate electrode, etching a substrate opening in the semiconductor substrate that is partially defined by the recessed surface, and depositing a thermally conductive layer over the semiconductor substrate that extends between the recessed surface and a portion of the semiconductor substrate over the channel.
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