- 专利标题: 3-D inductor and transformer
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申请号: US14719115申请日: 2015-05-21
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公开(公告)号: US09373673B2公开(公告)日: 2016-06-21
- 发明人: Hsiao-Tsung Yen , Chin-Wei Kuo , Hsien-Pin Hu , Sally Liu , Ming-Fa Chen , Jhe-Ching Lu
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L49/02
- IPC分类号: H01L49/02 ; H01F17/00 ; H01L23/498 ; H01L23/522 ; H01L23/64 ; H01F27/28 ; H01L21/283 ; H01L23/00
摘要:
In accordance with an embodiment, a semiconductor device comprises a semiconductor die, an interposer, and conductive bumps bonding the semiconductor die to the interposer. The semiconductor die comprises a first metallization layer, and the first metallization layer comprises a first conductive pattern. The interposer comprises a second metallization layer, and the second metallization layer comprises a second conductive pattern. Some of the conductive bumps electrically couple the first conductive pattern to the second conductive pattern to form a coil. Other embodiments contemplate other configurations of coils, inductors, and/or transformers, and contemplate methods of manufacture.
公开/授权文献
- US20150255531A1 3-D Inductor and Transformer 公开/授权日:2015-09-10
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