Invention Grant
- Patent Title: Semiconductor structure including silicon and oxygen-containing metal layer and process thereof
- Patent Title (中): 包括硅和含氧金属层的半导体结构及其工艺
-
Application No.: US14334680Application Date: 2014-07-18
-
Publication No.: US09384985B2Publication Date: 2016-07-05
- Inventor: Chun-Hsien Lin , An-Chi Liu , Hsiao-Pang Chou
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L21/321 ; H01L21/8238 ; H01L29/51
Abstract:
A metal gate process for polishing and oxidizing includes the following steps. A first dielectric layer having a trench is formed on a substrate. A barrier layer and a metal layer are formed sequentially to cover the trench and the first dielectric layer. A first chemical mechanical polishing process including a slurry of H2O2 with the concentration of 0˜0.5 weight percent (wt. %) is performed to polish the metal layer until the barrier layer on the first dielectric layer is exposed. A second chemical mechanical polishing process including a slurry of H2O2 with the concentration higher than 1 weight percent (wt. %) is performed to polish the barrier layer as well as oxidize a surface of the metal layer remaining in the trench until the first dielectric layer is exposed, thereby a metal oxide layer being formed on the metal layer.
Public/Granted literature
- US20160020104A1 SEMICONDUCTOR STRUCTURE INCLUDING SILICON AND OXYGEN-CONTAINING METAL LAYER AND PROCESS THEREOF Public/Granted day:2016-01-21
Information query
IPC分类:
