- Patent Title: Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same
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Application No.: US14686260Application Date: 2015-04-14
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Publication No.: US09385122B2Publication Date: 2016-07-05
- Inventor: Szu-Lin Cheng , Jack Oon Chu , Isaac Lauer , Jeng-Bang Yau
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully Scott Murphy and Presser
- Agent Frank Digiglio
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/336 ; H01L27/088 ; H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L21/3065 ; H01L21/8234 ; H01L29/08 ; H01L29/417 ; H01L29/45 ; H01L29/267 ; H01L29/165
Abstract:
A method for manufacturing a semiconductor device comprises growing a source/drain epitaxy region over a plurality of gates on a substrate, wherein a top surface of the source/drain epitaxy region is at a height above a top surface of each of the plurality of gates, forming at least one opening in the source/drain epitaxy region over a top surface of at least one gate, forming a silicide layer on the source/drain epitaxy region, wherein the silicide layer lines lateral sides of the at least one opening, depositing a dielectric layer on the silicide layer, wherein the dielectric layer is deposited in the at least one opening between the silicide layer on lateral sides of the at least one opening, etching the dielectric layer to form a contact area, and depositing a conductor in the contact area.
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