公开(公告)号：US09385122B2

公开(公告)日：2016-07-05

申请号：US14686260

申请日：2015-04-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Szu-Lin Cheng ,  Jack Oon Chu ,  Isaac Lauer ,  Jeng-Bang Yau

IPC: H01L29/76 ,  H01L21/336 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/267 ,  H01L29/165

CPC classification number: H01L27/088 ,  H01L21/02647 ,  H01L21/3065 ,  H01L21/823418 ,  H01L21/823475 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/267 ,  H01L29/41783 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/665 ,  H01L29/66568 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78

Abstract: A method for manufacturing a semiconductor device comprises growing a source/drain epitaxy region over a plurality of gates on a substrate, wherein a top surface of the source/drain epitaxy region is at a height above a top surface of each of the plurality of gates, forming at least one opening in the source/drain epitaxy region over a top surface of at least one gate, forming a silicide layer on the source/drain epitaxy region, wherein the silicide layer lines lateral sides of the at least one opening, depositing a dielectric layer on the silicide layer, wherein the dielectric layer is deposited in the at least one opening between the silicide layer on lateral sides of the at least one opening, etching the dielectric layer to form a contact area, and depositing a conductor in the contact area.