FINFET structure

Invention Grant

Title translation: FINFET结构

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Patent Title: FINFET structure
Patent Title (中): FINFET结构
Application No.: US14549523

Application Date: 2014-11-20
Publication No.: US09385191B2

Publication Date: 2016-07-05
Inventor: Yen-Liang Wu , Chung-Fu Chang , Wen-Jiun Shen , Man-Ling Lu , Chia-Jong Liu , Yi-Wei Chen
Applicant: UNITED MICROELECTRONICS CORPORATION
Applicant Address: TW Hsinchu
Assignee: UNITED MICROELECTRONICS CORPORATION
Current Assignee: UNITED MICROELECTRONICS CORPORATION
Current Assignee Address: TW Hsinchu
Agent Ding Yu Tan
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L21/762 ; H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L27/092

Abstract:

A FINFET structure is provided. The FINFET structure includes a substrate, a PMOS element, a NMOS element, a STI structure, and a bump structure. The substrate includes a first area and a second area adjacent to the first area. The PMOS element is disposed in the first area of the substrate, and includes at least one first fin structure. The NMOS element is disposed in the second area of the substrate and includes at least one second fin structure. The STI structure is disposed between the first fin structure and the second fin structure. The bump structure is disposed on the STI structure and has a carbon-containing dielectric material.

Abstract(Chinese):

提供FINFET结构。 FINFET结构包括衬底，PMOS元件，NMOS元件，STI结构和凸块结构。基板包括与第一区域相邻的第一区域和第二区域。 PMOS元件设置在衬底的第一区域中，并且包括至少一个第一鳍结构。 NMOS元件设置在衬底的第二区域中并且包括至少一个第二鳍结构。 STI结构设置在第一翅片结构和第二翅片结构之间。凸块结构设置在STI结构上并具有含碳介电材料。

Public/Granted literature

US20160148998A1 FINFET STRUCTURE Public/Granted day:2016-05-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS