公开(公告)号：US09634125B2

公开(公告)日：2017-04-25

申请号：US15046467

申请日：2016-02-18

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Yen-Liang Wu ,  Chung-Fu Chang ,  Yu-Hsiang Hung ,  Ssu-I Fu ,  Wen-Jiun Shen ,  Man-Ling Lu ,  Chia-Jong Liu ,  Yi-Wei Chen

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/10

CPC classification number: H01L29/66795 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/6656 ,  H01L29/785

Abstract: A field effect transistor (FinFET) device includes a substrate, a fin structure, a shallow trench isolation and a gate structure. The fin structure is formed on a surface of the substrate and includes a base fin structure and an epitaxial fin structure formed on the base fin structure. The shallow trench isolation structure is formed on the surface of the substrate and includes a peripheral zone and a concave zone. The peripheral zone physically contacts with the fin structure. The gate structure is disposed on the epitaxial fin structure perpendicularly. A method of fabricating the aforementioned field effect transistor is also provided.

公开(公告)号：US09385191B2

公开(公告)日：2016-07-05

申请号：US14549523

申请日：2014-11-20

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Yen-Liang Wu ,  Chung-Fu Chang ,  Wen-Jiun Shen ,  Man-Ling Lu ,  Chia-Jong Liu ,  Yi-Wei Chen

IPC: H01L21/8238 ,  H01L21/762 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L27/092

CPC classification number: H01L29/0649 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/7856

Abstract: A FINFET structure is provided. The FINFET structure includes a substrate, a PMOS element, a NMOS element, a STI structure, and a bump structure. The substrate includes a first area and a second area adjacent to the first area. The PMOS element is disposed in the first area of the substrate, and includes at least one first fin structure. The NMOS element is disposed in the second area of the substrate and includes at least one second fin structure. The STI structure is disposed between the first fin structure and the second fin structure. The bump structure is disposed on the STI structure and has a carbon-containing dielectric material.

Abstract translation: 提供FINFET结构。 FINFET结构包括衬底，PMOS元件，NMOS元件，STI结构和凸块结构。 基板包括与第一区域相邻的第一区域和第二区域。 PMOS元件设置在衬底的第一区域中，并且包括至少一个第一鳍结构。 NMOS元件设置在衬底的第二区域中并且包括至少一个第二鳍结构。 STI结构设置在第一翅片结构和第二翅片结构之间。 凸块结构设置在STI结构上并具有含碳介电材料。