Invention Grant
- Patent Title: Method for packaging a power device with bottom source electrode
- Patent Title (中): 用于封装具有底部源极的功率器件的方法
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Application No.: US14033140Application Date: 2013-09-20
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Publication No.: US09391005B2Publication Date: 2016-07-12
- Inventor: Yan Xun Xue , Yueh-Se Ho , Hamza Yilmaz , Jun Lu , Lei Shi , Liang Zhao , Ping Huang
- Applicant: Yan Xun Xue , Yueh-Se Ho , Hamza Yilmaz , Jun Lu , Lei Shi , Liang Zhao , Ping Huang
- Applicant Address: US CA Sunnyvale
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee Address: US CA Sunnyvale
- Agent Chein-Hwa S. Tsao; Chen-Chi Lin
- Main IPC: H01L23/495
- IPC: H01L23/495
Abstract:
A power semiconductor package has an ultra thin chip with front side molding to reduce substrate resistance; a lead frame unit with grooves located on both side leads provides precise positioning for connecting numerous bridge-shaped metal clips to the front side of the side leads. The bridge-shaped metal clips are provided with bridge structure and half or fully etched through holes for relieving superfluous solder during manufacturing process.
Public/Granted literature
- US20160155688A9 METHOD FOR PACKAGING A POWER DEVICE WITH BOTTOM SOURCE ELECTRODE Public/Granted day:2016-06-02
Information query
IPC分类:
