Invention Grant
- Patent Title: Programming memories with multi-level pass signal
- Patent Title (中): 用多级通过信号编程存储器
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Application No.: US14334946Application Date: 2014-07-18
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Publication No.: US09396791B2Publication Date: 2016-07-19
- Inventor: Shyam Sunder Raghunathan , Pranav Kalavade , Krishna K. Parat , Charan Srinivasan
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/56 ; G11C16/34

Abstract:
Memories and methods for programming memories with multi-level pass signals are provided. One method includes programming cells of the memory selected to be programmed to a particular target data state of the memory, using program disturb to program cells of the memory selected to be programmed to target data states that are lower than the particular target data state while programming cells of the memory selected to be programmed to the particular target data state, and boosting a channel voltage for cells of the memory selected to be programmed to the target data states that are lower than the particular target data state. Boosting may include using a multi-step pass signal.
Public/Granted literature
- US20160019949A1 PROGRAMMING MEMORIES WITH MULTI-LEVEL PASS SIGNAL Public/Granted day:2016-01-21
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