The disclosure generally relates to a method for forming multiple III-V Tunnel Field-Effect Transistors (III-V TFETs) microchips in which each TFET has a different threshold voltage (Vt) or work-function. In one embodiment of the disclosure, four TFETs are formed on a substrate. Each TFET has a source, drain and a gate electrode. Each gate electrode is then processed independently to provide a substantially different threshold voltage. Each TFET will have an intrinsic channel.