公开(公告)号：US09281397B2

公开(公告)日：2016-03-08

申请号：US14158539

申请日：2014-01-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Josephine Chang ,  Isaac Lauer ,  Chung-Hsun Lin ,  Jeffrey Sleight

IPC: H01L29/417 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/7835 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/823814 ,  H01L21/823871 ,  H01L27/088 ,  H01L29/41775 ,  H01L29/66659 ,  H01L29/7845

Abstract: A semiconductor device (e.g., field effect transistor (FET)) having an asymmetric feature, includes a first gate formed on a substrate, first and second diffusion regions formed in the substrate on a side of the first gate, and first and second contacts which contact the first and second diffusion regions, respectively, the first contact being asymmetric with respect to the second contact.

Abstract translation: 具有不对称特征的半导体器件（例如，场效应晶体管（FET））包括形成在衬底上的第一栅极，形成在第一栅极一侧的衬底中的第一和第二扩散区域以及第一和第二触点， 分别与第一和第二扩散区接触，第一触点相对于第二触点是不对称的。

公开(公告)号：US09397199B1

公开(公告)日：2016-07-19

申请号：US14992209

申请日：2016-01-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Unoh Kwon ,  Siddarth A. Krishnan ,  Vijay Narayanan ,  Jeffrey Sleight

IPC: H01L21/76 ,  H01L29/66 ,  H01L21/762 ,  H01L21/268 ,  H01L29/51 ,  H01L21/02 ,  H01L21/306 ,  H01L21/28

CPC classification number: H01L29/66795 ,  H01L21/02252 ,  H01L21/02351 ,  H01L21/2686 ,  H01L21/28185 ,  H01L21/30604 ,  H01L21/76224 ,  H01L21/823418 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/20 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66356 ,  H01L29/7391

Abstract: The disclosure generally relates to a method for forming multiple III-V Tunnel Field-Effect Transistors (III-V TFETs) microchips in which each TFET has a different threshold voltage (Vt) or work-function. In one embodiment of the disclosure, four TFETs are formed on a substrate. Each TFET has a source, drain and a gate electrode. Each gate electrode is then processed independently to provide a substantially different threshold voltage. Each TFET will have an intrinsic channel.

Abstract translation: 本发明一般涉及用于形成多个III-V隧道场效应晶体管（III-V TFET）微芯片的方法，其中每个TFET具有不同的阈值电压（Vt）或工作功能。 在本公开的一个实施例中，在衬底上形成四个TFET。 每个TFET都有源极，漏极和栅极。 然后，每个栅极电极被独立地处理以提供基本上不同的阈值电压。 每个TFET将具有固有通道。