P-type metal oxide semiconductor material and transistor

Invention Grant

US09401433B1 P-type metal oxide semiconductor material and transistor 有权

Title translation: P型金属氧化物半导体材料和晶体管

Patent Title: P-type metal oxide semiconductor material and transistor
Patent Title (中): P型金属氧化物半导体材料和晶体管
Application No.: US14982899

Application Date: 2015-12-29
Publication No.: US09401433B1

Publication Date: 2016-07-26
Inventor: Shan-Haw Chiou , Tzu-Chi Chou , Wen-Hsuan Chao , Hsin-Ming Cheng , Mu-Tung Chang , Tien-Heng Huang , Ren-Fong Cai
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Applicant Address: TW Hsinchu
Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Current Assignee Address: TW Hsinchu
Agency: Birch, Stewart, Kolasch & Birch, LLP
Priority: TW104140699A 20151204
Main IPC: H01L29/00
IPC: H01L29/00 ; H01L29/786 ; H01L29/24 ; H01L21/02

Abstract:

A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0

Abstract(Chinese):

提供了由Al x Ge（1-x）O y组成的p型金属氧化物半导体材料，其中0

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）