公开(公告)号：US09401433B1

公开(公告)日：2016-07-26

申请号：US14982899

申请日：2015-12-29

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Shan-Haw Chiou ,  Tzu-Chi Chou ,  Wen-Hsuan Chao ,  Hsin-Ming Cheng ,  Mu-Tung Chang ,  Tien-Heng Huang ,  Ren-Fong Cai

IPC: H01L29/00 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/78693 ,  H01L21/0237 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02631 ,  H01L29/24

Abstract: A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0

Abstract translation: 提供了由Al x Ge（1-x）O y组成的p型金属氧化物半导体材料，其中0