发明授权
- 专利标题： P-side layers for short wavelength light emitters
- 专利标题（中）： 用于短波长发光体的P侧层
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申请号： US13619598申请日： 2012-09-14
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公开(公告)号： US09401452B2公开(公告)日： 2016-07-26
- 发明人: John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang
- 申请人： John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang
- 申请人地址： US CA Palo Alto
- 专利权人： PALO ALTO RESEARCH CENTER INCORPORATED
- 当前专利权人： PALO ALTO RESEARCH CENTER INCORPORATED
- 当前专利权人地址： US CA Palo Alto
- 代理机构： Hollingsworth Davis, LLC
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/06 ; H01L33/14 ; H01L33/32 ; H01L21/02 ; B82Y20/00 ; H01S5/042 ; H01S5/20 ; H01S5/32 ; H01S5/343 ; H01S5/30 ; H01S5/34
摘要：
A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.
公开/授权文献
- US20140231745A1 P-SIDE LAYERS FOR SHORT WAVELENGTH LIGHT EMITTERS 公开/授权日：2014-08-21
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