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公开(公告)号：US08908161B2
公开(公告)日：2014-12-09
申请号：US13217821
申请日：2011-08-25
CPC分类号： H01L22/26 , H01L21/67086 , H01L21/67253 , H01L22/12 , H01L33/0079
摘要： Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.
摘要翻译： 讨论了从体积AlN上外延生长的一层或多层基本上去除块状氮化铝（AlN）的方法。 在蚀刻过程中，大块AlN暴露于蚀刻剂。 在蚀刻过程中，可以测量体积AlN的厚度并用于控制蚀刻。
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公开(公告)号：US20100295165A1
公开(公告)日：2010-11-25
申请号：US12471188
申请日：2009-05-22
CPC分类号： H01L21/50 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/0401 , H01L2224/05568 , H01L2224/05599 , H01L2224/1111 , H01L2224/11334 , H01L2224/13005 , H01L2224/13016 , H01L2224/13027 , H01L2224/16105 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/73104 , H01L2224/81903 , H01L2224/83193 , H01L2224/83855 , H01L2224/83859 , H01L2224/83874 , H01L2224/83885 , H01L2224/9211 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01018 , H01L2924/01024 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/0132 , H01L2924/09701 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H05K3/321 , H05K3/4015 , H05K2201/0311 , H01L2224/81 , H01L2224/83 , H01L2224/13099 , H01L2224/05099 , H01L2924/01015 , H01L2924/01049 , H01L2924/01031 , H01L2224/13599 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00
摘要： A package has a pad chip having contact pads, a spring chip having micro-springs in contact with the contact pads to form interconnects, the area in which the micro-springs contact the contact pads forming an interconnect area, a chemical activator in the interconnect area, and an adhesive responsive to the chemical activator in the interconnect area. A package has a pad chip having contact pads, a spring chip having micro-springs in contact with the contact pads to form interconnects, a chemical activator on one of either the pad chip or the spring chip, and an adhesive responsive to the chemical activator on the other of either the pad chip or the spring chip. A method includes providing a pad chip having contact pads, providing a spring chip having micro-springs, applying a chemical activator to one of either the pad chip or the spring chip, applying an adhesive responsive to the chemical activator on the other of the pad chip or the spring chip, aligning the pad chip to the spring chip such that the micro-springs will contact the contact pads, and pressing the pad chip and the spring chip together such that the chemical activator at least partially cures the adhesive.
摘要翻译： 封装具有具有接触焊盘的焊盘芯片，具有与接触焊盘接触以形成互连的微弹簧的弹簧芯片，微弹簧接触形成互连区域的接触焊盘的区域，互连中的化学活化剂 区域，以及响应于互连区域中的化学活化剂的粘合剂。 封装具有焊盘芯片，其具有接触焊盘，弹簧芯片，其具有与接触焊盘接触以形成互连的微弹簧，在焊盘芯片或弹簧芯片之一上的化学活化剂以及响应于化学活化剂的粘合剂 另一方面是垫片芯片或弹簧芯片。 一种方法包括提供具有接触焊盘的焊盘芯片，提供具有微弹簧的弹簧芯片，将化学活化剂施加到衬垫芯片或弹簧芯片中的一个上，在衬垫的另一个上施加响应于化学活化剂的粘合剂 芯片或弹簧芯片，将焊盘芯片对准弹簧芯片，使得微弹簧将接触接触焊盘，并将焊盘芯片和弹簧芯片压在一起，使得化学活化器至少部分地固化粘合剂。
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公开(公告)号：US09401452B2
公开(公告)日：2016-07-26
申请号：US13619598
申请日：2012-09-14
申请人： John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang
发明人： John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang
IPC分类号： H01L33/00 , H01L33/06 , H01L33/14 , H01L33/32 , H01L21/02 , B82Y20/00 , H01S5/042 , H01S5/20 , H01S5/32 , H01S5/343 , H01S5/30 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/14 , H01L33/32 , H01S5/0421 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3216 , H01S5/3404 , H01S5/34333
摘要： A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.
摘要翻译： 发光器件包括具有由掺杂有p型掺杂剂的Al x Ga Ga x Ga x Ga x Ga N交替层和掺杂有p型掺杂剂的Al x O x Ga 1-x low N形成的短周期超晶格（SPSL）的p侧异质结构，其中xlow≤xhigh≤ 0.9。 SPSL的每个层具有小于或等于约六个双层AlGaN的厚度。
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公开(公告)号：US08405198B2
公开(公告)日：2013-03-26
申请号：US12471188
申请日：2009-05-22
IPC分类号： H01L23/52
CPC分类号： H01L21/50 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/0401 , H01L2224/05568 , H01L2224/05599 , H01L2224/1111 , H01L2224/11334 , H01L2224/13005 , H01L2224/13016 , H01L2224/13027 , H01L2224/16105 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/73104 , H01L2224/81903 , H01L2224/83193 , H01L2224/83855 , H01L2224/83859 , H01L2224/83874 , H01L2224/83885 , H01L2224/9211 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01018 , H01L2924/01024 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/0132 , H01L2924/09701 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H05K3/321 , H05K3/4015 , H05K2201/0311 , H01L2224/81 , H01L2224/83 , H01L2224/13099 , H01L2224/05099 , H01L2924/01015 , H01L2924/01049 , H01L2924/01031 , H01L2224/13599 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00
摘要： A package has a pad chip having contact pads, a spring chip having micro-springs in contact with the contact pads to form interconnects, the area in which the micro-springs contact the contact pads forming an interconnect area, a chemical activator in the interconnect area, and an adhesive responsive to the chemical activator in the interconnect area. A package has a pad chip having contact pads, a spring chip having micro-springs in contact with the contact pads to form interconnects, a chemical activator on one of either the pad chip or the spring chip, and an adhesive responsive to the chemical activator on the other of either the pad chip or the spring chip. A method includes providing a pad chip having contact pads, providing a spring chip having micro-springs, applying a chemical activator to one of either the pad chip or the spring chip, applying an adhesive responsive to the chemical activator on the other of the pad chip or the spring chip, aligning the pad chip to the spring chip such that the micro-springs will contact the contact pads, and pressing the pad chip and the spring chip together such that the chemical activator at least partially cures the adhesive.
摘要翻译： 封装具有具有接触焊盘的焊盘芯片，具有与接触焊盘接触以形成互连的微弹簧的弹簧芯片，微弹簧接触形成互连区域的接触焊盘的区域，互连中的化学活化剂 区域，以及响应于互连区域中的化学活化剂的粘合剂。 封装具有焊盘芯片，其具有接触焊盘，弹簧芯片，其具有与接触焊盘接触以形成互连的微弹簧，在焊盘芯片或弹簧芯片之一上的化学活化剂以及响应于化学活化剂的粘合剂 另一方面是垫片芯片或弹簧芯片。 一种方法包括提供具有接触焊盘的焊盘芯片，提供具有微弹簧的弹簧芯片，将化学活化剂施加到衬垫芯片或弹簧芯片中的一个上，在衬垫的另一个上施加响应于化学活化剂的粘合剂 芯片或弹簧芯片，将焊盘芯片对准弹簧芯片，使得微弹簧将接触接触焊盘，并将焊盘芯片和弹簧芯片压在一起，使得化学活化器至少部分地固化粘合剂。
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公开(公告)号：US08399296B2
公开(公告)日：2013-03-19
申请号：US13269609
申请日：2011-10-09
CPC分类号： H01L21/563 , H01L24/01 , H01L24/13 , H01L24/17 , H01L24/81 , H01L25/0657 , H01L33/62 , H01L2224/13016 , H01L2224/1703 , H01L2224/17051 , H01L2224/17505 , H01L2224/17517 , H01L2224/73204 , H01L2224/81192 , H01L2224/81855 , H01L2224/81902 , H01L2224/83192 , H01L2225/06527 , H01L2225/06575 , H01L2225/06593 , H01L2924/01006 , H01L2924/01018 , H01L2924/01024 , H01L2924/01042 , H01L2924/01045 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： A method of assembling a package includes aligning a pad chip with a spring chip to form at least one interconnect in an interconnect area, adhering the pad chip to the spring chip so that there is a gap between the pad chip and the spring chip, dispensing underfill material into the gap to seal the interconnect area from an environment external to the package, and curing the underfill material to form a solid mold.
摘要翻译： 组装包装的方法包括将衬垫芯片与弹簧芯片对准以在互连区域中形成至少一个互连，将焊盘芯片粘附到弹簧芯片，使得在垫片芯片和弹簧芯片之间存在间隙，分配 将填充材料填充到间隙中以将互连区域与包装外部的环境密封，并固化底部填充材料以形成固体模具。
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6.发明申请AIRGAP MICRO-SPRING INTERCONNECT WITH BONDED UNDERFILL SEAL 有权AIRGAP MICR-SPRING INTERCONNECT WITH BONDED UNDERFILL SEAL公开(公告)号：US20100295164A1
公开(公告)日：2010-11-25
申请号：US12471163
申请日：2009-05-22
IPC分类号： H01L23/498
CPC分类号： H01L21/563 , H01L24/01 , H01L24/13 , H01L24/17 , H01L24/81 , H01L25/0657 , H01L33/62 , H01L2224/13016 , H01L2224/1703 , H01L2224/17051 , H01L2224/17505 , H01L2224/17517 , H01L2224/73204 , H01L2224/81192 , H01L2224/81855 , H01L2224/81902 , H01L2224/83192 , H01L2225/06527 , H01L2225/06575 , H01L2225/06593 , H01L2924/01006 , H01L2924/01018 , H01L2924/01024 , H01L2924/01042 , H01L2924/01045 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： A package includes a pad chip having contact pads, a spring chip having micro-springs in contact with the contact pads to form interconnects, the area in which the micro-springs contact the contact pads forming an interconnect area, an assembly material between the pad chip and the spring chip arranged to form a gap between the pad chip and the spring chip, and an underfill material in a portion of the gap to form a mold from the pad chip and the spring chip. A package includes a pad chip having contact pads, a spring chip having micro-springs in contact with the contact pads to form interconnects, the area in which the micro-springs contact the contact pads forming an interconnect area, an assembly material between the pad chip and the spring chip arranged to form a gap between the pad chip and the spring chip, an underfill material in the gap to form a mold from the pad chip and the spring chip, and at least one wall between the underfill material and the interconnect area. A method of assembling a package includes aligning a pad chip with a spring chip to form at least one interconnect in an interconnect area, adhering the pad chip to the spring chip so that there is a gap between the pad chip and the spring chip, dispensing underfill material into the gap to seal the interconnect area from an environment external to the package, and curing the underfill material to form a solid mold.
摘要翻译： 封装包括具有接触焊盘的焊盘芯片，具有与接触焊盘接触以形成互连的微弹簧的弹簧芯片，微弹簧接触形成互连区域的接触焊盘的区域，焊盘之间的组合材料 芯片和布置成在垫片芯片和弹簧芯片之间形成间隙的弹簧芯片，以及在间隙的一部分中的底部填充材料，以从垫片芯片和弹簧芯片形成模具。 封装包括具有接触焊盘的焊盘芯片，具有与接触焊盘接触以形成互连的微弹簧的弹簧芯片，微弹簧接触形成互连区域的接触焊盘的区域，焊盘之间的组合材料 芯片和弹簧芯片布置成在垫片芯片和弹簧芯片之间形成间隙，间隙中的底部填充材料从垫片芯片和弹簧芯片形成模具，以及底部填充材料和互连件之间的至少一个壁 区。 组装包装的方法包括将衬垫芯片与弹簧芯片对准以在互连区域中形成至少一个互连，将焊盘芯片粘附到弹簧芯片，使得在垫片芯片和弹簧芯片之间存在间隙，分配 将填充材料填充到间隙中以将互连区域与包装外部的环境密封，并固化底部填充材料以形成固体模具。
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7.发明申请AIRGAP MICRO-SPRING INTERCONNECT WITH BONDED UNDERFILL SEAL 有权AIRGAP MICR-SPRING INTERCONNECT WITH BONDED UNDERFILL SEAL公开(公告)号：US20120088330A1
公开(公告)日：2012-04-12
申请号：US13269609
申请日：2011-10-09
IPC分类号： H01L21/50
CPC分类号： H01L21/563 , H01L24/01 , H01L24/13 , H01L24/17 , H01L24/81 , H01L25/0657 , H01L33/62 , H01L2224/13016 , H01L2224/1703 , H01L2224/17051 , H01L2224/17505 , H01L2224/17517 , H01L2224/73204 , H01L2224/81192 , H01L2224/81855 , H01L2224/81902 , H01L2224/83192 , H01L2225/06527 , H01L2225/06575 , H01L2225/06593 , H01L2924/01006 , H01L2924/01018 , H01L2924/01024 , H01L2924/01042 , H01L2924/01045 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： A method of assembling a package includes aligning a pad chip with a spring chip to form at least one interconnect in an interconnect area, adhering the pad chip to the spring chip so that there is a gap between the pad chip and the spring chip, dispensing underfill material into the gap to seal the interconnect area from an environment external to the package, and curing the underfill material to form a solid mold.
摘要翻译： 组装包装的方法包括将衬垫芯片与弹簧芯片对准以在互连区域中形成至少一个互连，将焊盘芯片粘附到弹簧芯片，使得在垫片芯片和弹簧芯片之间存在间隙，分配 将填充材料填充到间隙中以将互连区域与包装外部的环境密封，并固化底部填充材料以形成固体模具。
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公开(公告)号：US09219189B2
公开(公告)日：2015-12-22
申请号：US13619687
申请日：2012-09-14
申请人： John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang , Suk Choi
发明人： John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang , Suk Choi
CPC分类号： H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/145 , H01L33/16
摘要： A light emitting device includes a p-side heterostructure, an n-side heterostructure, an active region disposed between the p-side heterostructure and the n-side heterostructure. An electron blocking layer (EBL) disposed between the p-side heterostructure and the active region comprises an aluminum containing group-III-nitride alloy. An aluminum composition of the EBL decreases as a function of distance along a [0001] direction from the active region towards the p-side heterostructure over a majority of the thickness of the EBL.
摘要翻译： 发光器件包括p侧异质结构，n侧异质结构，设置在p侧异质结构和n侧异质结构之间的有源区。 设置在p侧异质结构和有源区之间的电子阻挡层（EBL）包括含铝的III族氮化物合金。 在EBL的大部分厚度下，EBL的铝组合物作为沿着[0001]方向从活性区域朝向p侧异质结构的距离的函数而减小。
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公开(公告)号：US20150280056A1
公开(公告)日：2015-10-01
申请号：US13619687
申请日：2012-09-14
申请人： John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang , Suk Choi
发明人： John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang , Suk Choi
CPC分类号： H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/145 , H01L33/16
摘要： A light emitting device includes a p-side heterostructure, an n-side heterostructure, an active region disposed between the p-side heterostructure and the n-side heterostructure. An electron blocking layer (EBL) disposed between the p-side heterostructure and the active region comprises an aluminum containing group-III-nitride alloy. An aluminum composition of the EBL decreases as a function of distance along a [0001] direction from the active region towards the p-side heterostructure over a majority of the thickness of the EBL.
摘要翻译： 发光器件包括p侧异质结构，n侧异质结构，设置在p侧异质结构和n侧异质结构之间的有源区。 设置在p侧异质结构和有源区之间的电子阻挡层（EBL）包括含铝的III族氮化物合金。 在EBL的大部分厚度下，EBL的铝组合物作为沿着[0001]方向从活性区域朝向p侧异质结构的距离的函数而减小。
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公开(公告)号：US20140231745A1
公开(公告)日：2014-08-21
申请号：US13619598
申请日：2012-09-14
申请人： John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang
发明人： John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/14 , H01L33/32 , H01S5/0421 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3216 , H01S5/3404 , H01S5/34333
摘要： A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.
摘要翻译： 发光器件包括具有掺杂有p型掺杂剂的Al x Ga Ga x Ga x Ga x Ga N交替层和掺杂有p型掺杂剂的Al x O x Ga 1-x low N的短周期超晶格（SPSL）的p侧异质结构，其中x low＆ 0.9。 SPSL的每个层具有小于或等于约六个双层AlGaN的厚度。
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