- 专利标题： Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate
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申请号： US14809236申请日： 2015-07-26
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公开(公告)号： US09406679B2公开(公告)日： 2016-08-02
- 发明人: Lisa F. Edge , Hemanth Jagannathan , Balasubramanian S. Haran
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Otterstedt, Ellenbogen & Kammer, LLP
- 代理商 Daniel P. Morris
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L27/088 ; H01L29/45 ; H01L21/8238 ; H01L21/28 ; H01L29/49 ; H01L29/51
摘要：
A substrate is provided, having formed thereon a first region and a second region of a complementary type to the first region. A gate dielectric is deposited over the substrate, and a first full metal gate stack is deposited over the gate dielectric. The first full metal gate stack is removed over the first region to produce a resulting structure. Over the resulting structure, a second full metal gate stack is deposited, in contact with the gate dielectric over the first region. The first and second full metal gate stacks are encapsulated.
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