Invention Grant
- Patent Title: Multibit self-reference thermally assisted MRAM
- Patent Title (中): 多参数自参考热辅助MRAM
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Application No.: US14583983Application Date: 2014-12-29
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Publication No.: US09406870B2Publication Date: 2016-08-02
- Inventor: Anthony J. Annunziata , Lucian Prejbeanu , Philip L. Trouilloud , Daniel C. Worledge
- Applicant: International Business Machines Corporation , Crocus Technology SA
- Applicant Address: US NY Armonk FR
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,CROCUS TECHNOLOGY SA
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,CROCUS TECHNOLOGY SA
- Current Assignee Address: US NY Armonk FR
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/02 ; H01L43/08 ; H01L43/12
Abstract:
A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.
Public/Granted literature
- US20150294708A1 MULTIBIT SELF-REFERENCE THERMALLY ASSISTED MRAM Public/Granted day:2015-10-15
Information query
