Invention Grant
- Patent Title: Multi-level memory with direct access
- Patent Title (中): 具有直接访问功能的多级内存
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Application No.: US14879004Application Date: 2015-10-08
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Publication No.: US09430151B2Publication Date: 2016-08-30
- Inventor: Blaise Fanning , Shekoufeh Qawami , Raymond S. Tetrick , Frank T. Hady
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alpine Technology Law Group LLC
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G06F12/02 ; G06F12/10 ; G11C16/00 ; G11C7/10 ; G06F12/08 ; G11C11/56
Abstract:
Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
Public/Granted literature
- US20160110106A1 MULTI-LEVEL MEMORY WITH DIRECT ACCESS Public/Granted day:2016-04-21
Information query
