Invention Grant
- Patent Title: Methods of forming charge-trapping regions
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Application No.: US14875497Application Date: 2015-10-05
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Publication No.: US09431493B2Publication Date: 2016-08-30
- Inventor: Nishant Sinha
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/423
- IPC: H01L29/423 ; B82Y10/00 ; H01L21/28 ; H01L21/316 ; H01L29/788 ; H01L21/02 ; H01L21/285 ; H01L21/288

Abstract:
Some embodiments include methods of forming charge-trapping zones. The methods may include forming nanoparticles, transferring the nanoparticles to a liquid to form a dispersion, forming an aerosol from the dispersion, and then directing the aerosol onto a substrate to form charge-trapping centers comprising the nanoparticles. The charge-trapping zones may be incorporated into flash memory cells.
Public/Granted literature
- US20160027883A1 Methods of Forming Charge-Trapping Regions Public/Granted day:2016-01-28
Information query
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