Invention Grant
- Patent Title: Lithographic stack excluding SiARC and method of using same
- Patent Title (中): 不包括SiARC的平版印刷版及其使用方法
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Application No.: US14281359Application Date: 2014-05-19
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Publication No.: US09431528B2Publication Date: 2016-08-30
- Inventor: Hong Yu , Xiang Hu , Zhao Lun , Huang Liu
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne F. Reinke, Esq.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L29/06 ; H01L29/12 ; H01L29/78 ; H01L21/3105 ; H01L29/66 ; H01L21/02
Abstract:
A lithographic stack over a raised structure (e.g., fin) of a non-planar semiconductor structure, such as a FinFET, includes a bottom layer of spin-on amorphous carbon or spin-on organic planarizing material, a hard mask layer of a nitride and/or an oxide on the spin-on layer, a layer of a developable bottom anti-reflective coating (dBARC) on the hard mask layer, and a top layer of photoresist. The stack is etched to expose and recess the raised structure, and epitaxial structure(s) are grown on the recess.
Public/Granted literature
- US20150332934A1 LITHOGRAPHIC STACK EXCLUDING SiARC AND METHOD OF USING SAME Public/Granted day:2015-11-19
Information query
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