Invention Grant
US09437480B2 Methods of forming semiconductor structures including tight pitch contacts and lines
有权
形成半导体结构的方法，包括紧密节距接触和线
- Patent Title: Methods of forming semiconductor structures including tight pitch contacts and lines
- Patent Title (中): 形成半导体结构的方法，包括紧密节距接触和线
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Application No.: US14662918Application Date: 2015-03-19
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Publication No.: US09437480B2Publication Date: 2016-09-06
- Inventor: Luan C. Tran
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L21/02 ; H01L21/033 ; H01L21/311 ; H01L21/314 ; H01L21/316 ; H01L23/48 ; H01L21/308 ; H01L27/108
Abstract:
Methods of fabricating semiconductor structures incorporating tight pitch contacts aligned with active area features and of simultaneously fabricating self-aligned tight pitch contacts and conductive lines using various techniques for defining patterns having sublithographic dimensions. Semiconductor structures having tight pitch contacts aligned with active area features and, optionally, aligned conductive lines are also disclosed, as are semiconductor structures with tight pitch contact holes and aligned trenches for conductive lines.
Public/Granted literature
- US20150194341A1 METHODS OF FORMING SEMICONDUCTOR STRUCTURES INCLUDING TIGHT PITCH CONTACTS AND LINES Public/Granted day:2015-07-09
Information query
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