Invention Grant
- Patent Title: Devices including metal-silicon contacts using indium arsenide films and apparatus and methods
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Application No.: US14939202Application Date: 2015-11-12
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Publication No.: US09441298B2Publication Date: 2016-09-13
- Inventor: Khaled Z. Ahmed , Prabu Gopalraja , Atif Noori , Mei Chang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/44
- IPC: H01L21/44 ; C23C16/52 ; H01L21/768 ; H01L21/67 ; H01L23/482 ; H01L29/772 ; H01L21/285 ; C23C14/22 ; C23C16/02 ; C23C16/455
Abstract:
Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under “load lock” conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide.
Public/Granted literature
- US20160068962A1 Devices Including Metal-Silicon Contacts Using Indium Arsenide Films And Apparatus And Methods Public/Granted day:2016-03-10
Information query
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