Invention Grant
- Patent Title: Response to tamper detection in a memory device
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Application No.: US14942665Application Date: 2015-11-16
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Publication No.: US09443113B2Publication Date: 2016-09-13
- Inventor: Syed M. Alam , Thomas Andre
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: G06F21/78
- IPC: G06F21/78 ; G06F21/79 ; G06F21/86 ; G11C7/24 ; G11C11/16 ; G06F3/06

Abstract:
In response to a tamper-attempt indication, a memory device selectively disables one or more memory operations. Disabling can be accomplished by different techniques, including altering bias voltages associated with performing the memory operation, gating off a current needed for performing the memory operation, and limiting the needed current to a magnitude below the threshold magnitude required for the operation. After disabling the memory operation, a mock current can be generated. The mock current is intended to mimic the current normally expended during the memory operation when not disabled, thereby leading a user to believe that the device is continuing to operate normally even though the memory operation that is being attempted is not actually being performed.
Public/Granted literature
- US20160070935A1 RESPONSE TO TAMPER DETECTION IN A MEMORY DEVICE Public/Granted day:2016-03-10
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