The present disclosure relates to a semiconductor device and a method for manufacturing the same. The semiconductor device includes a semiconductor die, a semiconductor element and a solder layer. The semiconductor die includes a copper pillar. The semiconductor element includes a surface finish layer, wherein the material of the surface finish layer is a combination of at least two of nickel, gold, and palladium. The solder layer is disposed between the copper pillar and the surface finish layer. The solder layer includes a first intermetallic compound (IMC) and a second IMC, wherein the first IMC includes a combination of at least two of copper, nickel and tin. The second IMC is a combination of gold and tin, a combination of palladium and tin, or both.