公开(公告)号：US09443813B1

公开(公告)日：2016-09-13

申请号：US14639535

申请日：2015-03-05

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yu-Hsiang Hsiao ,  Chiu-Wen Lee ,  Ping-Feng Yang ,  Kwang-Lung Lin

IPC: H01L23/00

CPC classification number: H01L24/13 ,  B23K1/0016 ,  B23K35/262 ,  B23K35/302 ,  B23K2101/40 ,  C22C9/02 ,  C22C13/00 ,  H01L24/05 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/1182 ,  H01L2224/13025 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13686 ,  H01L2224/16146 ,  H01L2224/16503 ,  H01L2224/16507 ,  H01L2224/81193 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2225/06582 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: The present disclosure relates to a semiconductor device and a method for manufacturing the same. The semiconductor device includes a semiconductor die, a semiconductor element and a solder layer. The semiconductor die includes a copper pillar. The semiconductor element includes a surface finish layer, wherein the material of the surface finish layer is a combination of at least two of nickel, gold, and palladium. The solder layer is disposed between the copper pillar and the surface finish layer. The solder layer includes a first intermetallic compound (IMC) and a second IMC, wherein the first IMC includes a combination of at least two of copper, nickel and tin. The second IMC is a combination of gold and tin, a combination of palladium and tin, or both.

Abstract translation: 本公开涉及一种半导体器件及其制造方法。 半导体器件包括半导体管芯，半导体元件和焊料层。 半导体管芯包括铜柱。 半导体元件包括表面光洁度层，其中表面光洁度层的材料是镍，金和钯中的至少两种的组合。 焊料层设置在铜柱和表面光洁度层之间。 焊料层包括第一金属间化合物（IMC）和第二IMC，其中第一IMC包括铜，镍和锡中的至少两种的组合。 第二个IMC是金和锡的组合，钯和锡的组合，或两者兼而有之。

公开(公告)号：US09960136B2

公开(公告)日：2018-05-01

申请号：US15239745

申请日：2016-08-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yu-Hsiang Hsiao ,  Chiu-Wen Lee ,  Ping-Feng Yang ,  Kwang-Lung Lin

IPC: H01L23/00 ,  B23K1/00 ,  B23K35/26 ,  B23K35/30 ,  C22C9/02 ,  C22C13/00 ,  H01L25/065 ,  H01L25/00 ,  B23K101/40

CPC classification number: H01L24/13 ,  B23K1/0016 ,  B23K35/262 ,  B23K35/302 ,  B23K2101/40 ,  C22C9/02 ,  C22C13/00 ,  H01L24/05 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/1182 ,  H01L2224/13025 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13686 ,  H01L2224/16146 ,  H01L2224/16503 ,  H01L2224/16507 ,  H01L2224/81193 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2225/06582 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor device includes a first circuit layer, a copper pillar disposed adjacent to the first circuit layer, a second circuit layer and a solder layer. The second circuit layer includes an electrical contact and a surface finish layer disposed on the electrical contact, wherein a material of the surface finish layer is a combination of at least two of nickel, gold, and palladium. The solder layer is disposed between the copper pillar and the surface finish layer. The solder layer includes a first intermetallic compound (IMC) and a second IMC, wherein the first IMC includes a combination of two or more of copper, nickel and tin, and the second IMC includes a combination of gold and tin, a combination of palladium and tin, or both.