Invention Grant
US09448476B2 Photoresist composition and method of manufacturing a thin film transistor substrate 有权
光刻胶组合物和制造薄膜晶体管衬底的方法

Photoresist composition and method of manufacturing a thin film transistor substrate
Abstract:
A photoresist composition includes about 0.1 to about 30 parts by weight of a photo-initiator, about 1 to 50 parts by weight of a first acrylate monomer including at least five functional groups, about 1 to 50 parts by weight of a second acrylate monomer including at most four functional groups with respect to about 100 parts by weight of an acryl-copolymer.
Information query
Patent Agency Ranking
0/0