Invention Grant
- Patent Title: Photoresist pattern trimming compositions and methods
- Patent Title (中): 光刻胶图案修剪组合物和方法
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Application No.: US14586945Application Date: 2014-12-30
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Publication No.: US09448486B2Publication Date: 2016-09-20
- Inventor: Cong Liu , Seung-Hyun Lee , Kevin Rowell , Gerhard Pohlers , Cheng-Bai Xu , Wenyan Yin , Thomas A. Estelle , Shintaro Yamada
- Applicant: Rohm and Haas Electronic Materials LLC
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agent Jonathan D. Baskin
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/40 ; G03F7/039
Abstract:
Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.
Public/Granted literature
- US20150185620A1 PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS Public/Granted day:2015-07-02
Information query
IPC分类:
