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    Photoresist pattern trimming compositions and pattern formation methods
    1.
    发明授权
    Photoresist pattern trimming compositions and pattern formation methods 有权

    公开(公告)号：US11506981B2

    公开(公告)日：2022-11-22

    申请号：US16872878

    申请日：2020-05-12

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Xisen Hou ,  Irvinder Kaur ,  Cong Liu ,  Mingqi Li ,  Kevin Rowell ,  Cheng-Bai Xu

    IPC: G03F7/11 ,  G03F7/38 ,  C08F212/08 ,  H01L21/027 ,  C08F212/14 ,  C08F220/18

    Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND PATTERN FORMATION METHODS
    2.
    发明申请
    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND PATTERN FORMATION METHODS 审中-公开

    公开(公告)号：US20200379351A1

    公开(公告)日：2020-12-03

    申请号：US16872878

    申请日：2020-05-12

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Xisen Hou ,  Irvinder Kaur ,  Cong Liu ,  Mingqi Li ,  Kevin Rowell ,  Cheng-Bai Xu

    IPC: G03F7/11 ,  G03F7/38 ,  C08F212/08 ,  C08F220/18 ,  C08F212/14 ,  H01L21/027

    Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

    Photoresist topcoat compositions and methods of processing photoresist compositions
    3.
    发明授权
    Photoresist topcoat compositions and methods of processing photoresist compositions 有权

    公开(公告)号：US10578969B2

    公开(公告)日：2020-03-03

    申请号：US16245631

    申请日：2019-01-11

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong Liu ,  Doris H. Kang ,  Deyan Wang ,  Cheng-Bai Xu ,  Mingqi Li ,  Irvinder Kaur

    IPC: G03F7/11 ,  G03F7/09 ,  G03F7/038 ,  B05C11/08 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027 ,  G03F7/40 ,  G03F7/38 ,  G03F7/20

    Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

    MULTIPLE-PATTERN FORMING METHODS
    5.
    发明申请
    MULTIPLE-PATTERN FORMING METHODS 有权
    多模式形成方法

    公开(公告)号：US20160062232A1

    公开(公告)日：2016-03-03

    申请号：US14836050

    申请日：2015-08-26

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

    Inventor： Chang-Young Hong ,  Cheng-Bai Xu ,  Jung Woo Kim ,  Cong Liu ,  Shintaro Yamada ,  Lori Anne Joesten ,  Choong-Bong Lee ,  Phillip D. Hustad ,  James C. Taylor

    IPC: G03F7/00 ,  G03F7/40 ,  G03F7/32 ,  H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/40 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337

    Abstract: Multiple-pattern forming methods are provided. The methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) patternwise exposing the photoresist layer to activating radiation; (d) baking the exposed photoresist layer; (e) contacting the baked photoresist layer with a first developer to form a first resist pattern; (f) treating the first resist pattern with a coating composition comprising an expedient for switching solubility of a sidewall region of the first resist pattern from soluble to insoluble with respect to a second developer that is different from the first developer; and (g) contacting the treated first resist pattern with the second developer to remove portions of the first resist pattern, leaving the solubility-switched sidewall region to form a multiple-pattern. The methods have particular applicability to the semiconductor manufacturing industry for the formation of fine lithographic patterns.

    Abstract translation: 提供了多模式形成方法。 所述方法包括：（a）提供包括一个或多个待图案化层的半导体衬底; （b）在待图案化的一层或多层上形成光致抗蚀剂层，其中光致抗蚀剂层由包含酸性不稳定基团的基质聚合物组成的组合物形成; 光致酸发生器; 和溶剂; （c）将光致抗蚀剂层图案化地曝光成激活辐射; （d）烘烤曝光的光致抗蚀剂层; （e）使烘烤的光致抗蚀剂层与第一显影剂接触以形成第一抗蚀剂图案; （f）用涂料组合物处理所述第一抗蚀剂图案，所述涂料组合物包括相对于不同于所述第一显影剂的第二显影剂将所述第一抗蚀剂图案的侧壁区域的可溶解度从可溶性切换到不溶性的方法; 和（g）使经处理的第一抗蚀剂图案与第二显影剂接触以除去第一抗蚀剂图案的部分，留下溶解度转换侧壁区域以形成多重图案。 该方法对于形成精细光刻图案的半导体制造业具有特别的适用性。

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