公开(公告)号：US09448486B2

公开(公告)日：2016-09-20

申请号：US14586945

申请日：2014-12-30

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong Liu ,  Seung-Hyun Lee ,  Kevin Rowell ,  Gerhard Pohlers ,  Cheng-Bai Xu ,  Wenyan Yin ,  Thomas A. Estelle ,  Shintaro Yamada

IPC: G03F7/004 ,  G03F7/40 ,  G03F7/039

CPC classification number: G03F7/405 ,  G03F7/0392

Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.