Invention Grant
- Patent Title: Error correction method and module for non-volatile memory
- Patent Title (中): 用于非易失性存储器的纠错方法和模块
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Application No.: US14554577Application Date: 2014-11-26
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Publication No.: US09454428B2Publication Date: 2016-09-27
- Inventor: Kui Cai , Zhiliang Qin , Xueqiang Wang
- Applicant: Agency for Science, Technology and Research
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Crockett & Crockett, PC
- Agent K. David Crockett, Esq.; Niky Economy Syrengelas, Esq.
- Priority: SG201308752 20131126
- Main IPC: H03M13/00
- IPC: H03M13/00 ; G06F11/10 ; H03M13/45 ; G11C11/16 ; H03M13/15

Abstract:
There is provided an error correction method for a non-volatile memory. The method includes receiving a codeword read from the non-volatile memory, computing a reliability information for each bit of the codeword received, and performing a reduced-complexity soft-decision decoding (SDD) technique to decode the received codeword. In particular, the SDD technique includes forming a set of test patterns based on the reliability data, and determining whether to perform a HDD of a test pattern in the set of test patterns based on a distance between the test pattern and a candidate pattern. There is also provided an error correction module for a non-volatile memory and a memory system incorporating the error correction module.
Public/Granted literature
- US20150149873A1 ERROR CORRECTION METHOD AND MODULE FOR NON-VOLATILE MEMORY Public/Granted day:2015-05-28
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