Abstract:
According to embodiments of the present invention, a decoder for a memory device is provided. The decoder includes an error detection circuitry configured to multiply a vector of one or more data words with a parity matrix to determine a plurality of syndrome values and generate a plurality of coefficients from multiplying a syndrome vector with an inverse of a syndrome matrix; and an error correction circuitry configured to perform a Chien search on a first part of the plurality of coefficients to determine error indicators indicating error locations in a first part of the one or more data words, and subsequently on a second part of the plurality of coefficients to determine error indicators indicating error locations in a second part of the one or more data words. According to further embodiments of the present invention, a memory device and method of decoding a memory device are also provided.
Abstract:
There is provided an error correction method for a non-volatile memory. The method includes receiving a codeword read from the non-volatile memory, computing a reliability information for each bit of the codeword received, and performing a reduced-complexity soft-decision decoding (SDD) technique to decode the received codeword. In particular, the SDD technique includes forming a set of test patterns based on the reliability data, and determining whether to perform a HDD of a test pattern in the set of test patterns based on a distance between the test pattern and a candidate pattern. There is also provided an error correction module for a non-volatile memory and a memory system incorporating the error correction module.