Invention Grant
- Patent Title: Multiple retry reads in a read channel of a memory
- Patent Title (中): 多次重试读取存储器的读通道
-
Application No.: US14990129Application Date: 2016-01-07
-
Publication No.: US09455004B2Publication Date: 2016-09-27
- Inventor: AbdelHakim S. Alhussien , Yunxiang Wu , Sundararajan Sankaranarayanan , Zhengang Chen , Erich F. Haratsch
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Christopher P. Maiorana, PC
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/12 ; G11C13/00 ; G11C16/26 ; G11C7/14 ; G11C11/56 ; G11C16/28

Abstract:
An apparatus having a circuit and a decoder is disclosed. The circuit is configured to adjust an initial one of a plurality of reference voltages in a read channel of a memory by shifting the initial reference voltage an amount toward a center of a window and read a codeword from the memory a number of times. The window bounds a sweep of the reference voltages. Each retry of the reads uses a respective reference voltage from a pattern of the reference voltages. The pattern is symmetrically spaced about the initial reference voltage. The pattern fits in the window. The decoder is configured to generate read data by performing an iterative decoding procedure on the codeword based on the reads.
Public/Granted literature
- US20160118093A1 MULTIPLE RETRY READS IN A READ CHANNEL OF A MEMORY Public/Granted day:2016-04-28
Information query