Invention Grant
- Patent Title: Fin diode structure
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Application No.: US14687921Application Date: 2015-04-16
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Publication No.: US09455246B2Publication Date: 2016-09-27
- Inventor: Chang-Tzu Wang , Ping-Chen Chang , Tien-Hao Tang , Kuan-Cheng Su
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/02 ; H01L29/861 ; H01L21/76 ; H01L29/78 ; H01L27/06 ; H01L29/06 ; H01L21/22 ; H01L21/265 ; H01L21/306 ; H01L29/66 ; H01L29/16 ; H01L29/20
Abstract:
A fin diode structure and method of manufacturing the same is provided in present invention, which the structure includes a substrate, a doped well formed in the substrate, a plurality of fins of first conductivity type and a plurality of fins of second conductivity type protruding from the doped well, and a doped region of first conductivity type formed globally in the substrate between the fins of first conductivity type, the fins of second conductivity type, the shallow trench isolation and the doped well and connecting with the fins of first doped type and the fins of second doped type.
Public/Granted literature
- US20150221632A1 FIN DIODE STRUCTURE Public/Granted day:2015-08-06
Information query
IPC分类:
