Invention Grant
US09455402B2 Resistive memory device with ring-shaped metal oxide on top surfaces of ring-shaped metal layer and barrier layer
有权
具有环形金属氧化物的电阻式存储器件在环形金属层和阻挡层的顶表面上
- Patent Title: Resistive memory device with ring-shaped metal oxide on top surfaces of ring-shaped metal layer and barrier layer
- Patent Title (中): 具有环形金属氧化物的电阻式存储器件在环形金属层和阻挡层的顶表面上
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Application No.: US14603390Application Date: 2015-01-23
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Publication No.: US09455402B2Publication Date: 2016-09-27
- Inventor: Yu-Yu Lin , Feng-Min Lee , Kuang-Hao Chiang , Ming-Hsiu Lee
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A resistive memory device is provided, comprising a bottom electrode, a patterned dielectric layer with a via formed on the bottom electrode, a barrier layer formed at sidewalls and a bottom surface of the via as a liner, a ring-shaped metal layer formed at sidewalls and a bottom surface of the barrier layer, and a ring-shaped metal oxide formed on a top surface of the ring-shaped metal layer.
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