Invention Grant
- Patent Title: Techniques for accessing a dynamic random access memory array
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Application No.: US14829306Application Date: 2015-08-18
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Publication No.: US09472249B2Publication Date: 2016-10-18
- Inventor: Andre Schaefer , Jen-Chieh Yeh , Pei-Wen Luo
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C7/10 ; G11C11/408 ; G11C11/4076 ; G11C8/12 ; G11C8/10 ; G11C11/4096 ; G11C11/4063 ; G11C11/4097

Abstract:
Examples are disclosed for accessing a dynamic random access memory (DRAM) array. In some examples, sub-arrays of a DRAM bank may be capable of opening multiple pages responsive to a same column address strobe. In other examples, sub-arrays of a DRAM bank may be arranged such that input/output (IO) bits may be routed in a serialized manner over an IO wire. For these other examples, the IO wire may pass through a DRAM die including the DRAM bank and/or may couple to a memory channel or bus outside of the DRAM die. Other examples are described and claimed.
Public/Granted literature
- US20150357011A1 Techniques for Accessing a Dynamic Random Access Memory Array Public/Granted day:2015-12-10
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