Invention Grant
- Patent Title: Method of operating memory device using different read conditions
- Patent Title (中): 使用不同读取条件操作存储设备的方法
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Application No.: US14698175Application Date: 2015-04-28
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Publication No.: US09472275B2Publication Date: 2016-10-18
- Inventor: Hyun-Kook Park , Young-Hoon Oh , Dae-Seok Byeon , Yong-Kyu Lee , Hyo-Jin Kwon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0096768 20140729
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G06F11/00 ; G11C11/16
Abstract:
A memory device and a method of operating the memory device are provided for performing a read-retry operation. The method of operating the memory device includes starting a read-retry mode, reading data of multiple cell regions using different read conditions, and setting a final read condition for the cell regions according to results of data determination operations on data read from the cell regions.
Public/Granted literature
- US20160035417A1 MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE Public/Granted day:2016-02-04
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