Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US14339867Application Date: 2014-07-24
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Publication No.: US09472429B2Publication Date: 2016-10-18
- Inventor: Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2006-266543 20060929
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/67 ; H01L21/02 ; H01L21/70

Abstract:
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.
Public/Granted literature
- US20150017751A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-01-15
Information query
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