公开(公告)号：US10134784B2

公开(公告)日：2018-11-20

申请号：US15428285

申请日：2017-02-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC: H01L31/18 ,  H01L27/12 ,  B32B43/00 ,  H01L21/67 ,  H01L21/683 ,  H01L27/15 ,  H01L33/00 ,  G02F1/13 ,  G02F1/133 ,  G06K19/077 ,  H01L51/00 ,  H01L31/20

Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

公开(公告)号：US09472429B2

公开(公告)日：2016-10-18

申请号：US14339867

申请日：2014-07-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC: H01L27/12 ,  H01L21/67 ,  H01L21/02 ,  H01L21/70

CPC classification number: H01L21/67132 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/67092 ,  H01L21/707 ,  H01L27/1266

Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

公开(公告)号：US09995970B2

公开(公告)日：2018-06-12

申请号：US15661602

申请日：2017-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yohei Monma ,  Hiroki Adachi ,  Shingo Eguchi ,  Saki Obana ,  Koji Moriya ,  Shuji Fukai

IPC: G02F1/1339 ,  G02F1/1345

CPC classification number: G02F1/1339 ,  G02F1/1345

Abstract: The object can be achieved by the following structure. A material whose value of fracture toughness is greater than or equal to 1.5 [MPa·m1/2] is used for a base substrate and a counter substrate which hold a liquid crystal material therebetween; a first sealant containing liquid crystal contaminants at less than or equal to 1×10−4 wt % is provided so as be in contact with the liquid crystal material and to surround the liquid crystal material seamlessly; the second sealant is provided to surround the first sealant; and the base substrate and the counter substrate which hold the liquid crystal material therebetween using the first sealant and the second sealant are bonded with a bond strength of greater than or equal to 1 [N/mm2].

公开(公告)号：US20170322437A1

公开(公告)日：2017-11-09

申请号：US15661602

申请日：2017-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yohei Monma ,  Hiroki Adachi ,  Shingo Eguchi ,  Saki Obana ,  Koji Moriya ,  Shuji Fukai

IPC: G02F1/1339 ,  G02F1/1345

CPC classification number: G02F1/1339 ,  G02F1/1345

Abstract: The object can be achieved by the following structure. A material whose value of fracture toughness is greater than or equal to 1.5 [MPa·m1/2] is used for a base substrate and a counter substrate which hold a liquid crystal material therebetween; a first sealant containing liquid crystal contaminants at less than or equal to 1×10−4 wt % is provided so as be in contact with the liquid crystal material and to surround the liquid crystal material seamlessly; the second sealant is provided to surround the first sealant; and the base substrate and the counter substrate which hold the liquid crystal material therebetween using the first sealant and the second sealant are bonded with a bond strength of greater than or equal to 1 [N/mm2].

公开(公告)号：US09397126B2

公开(公告)日：2016-07-19

申请号：US14801093

申请日：2015-07-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC: H01L21/58 ,  H01L27/12 ,  B32B43/00 ,  H01L21/67 ,  H01L21/683 ,  H01L27/15 ,  H01L33/00 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L27/1266 ,  B32B43/006 ,  G02F1/1303 ,  G02F1/13306 ,  G06K19/0772 ,  H01L21/67132 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/156 ,  H01L31/1892 ,  H01L31/206 ,  H01L33/005 ,  H01L51/003 ,  H01L51/0097 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2221/68395 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/19041 ,  H01L2924/30105 ,  Y10T29/41

Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

公开(公告)号：US09087931B2

公开(公告)日：2015-07-21

申请号：US14540348

申请日：2014-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC: H01L31/18 ,  H01L33/00 ,  H01L27/15

CPC classification number: H01L27/1266 ,  B32B43/006 ,  G02F1/1303 ,  G02F1/13306 ,  G06K19/0772 ,  H01L21/67132 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/156 ,  H01L31/1892 ,  H01L31/206 ,  H01L33/005 ,  H01L51/003 ,  H01L51/0097 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2221/68395 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/19041 ,  H01L2924/30105 ,  Y10T29/41

Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

Abstract translation: 为了在从用于制造半导体元件的基板剥离包含半导体元件的元件形成层而被除去形成有元件形成层和剥离层的基板和薄膜之间的间隙中时，为了消除放电， 加压辊。 该膜附着在加压辊之间的元件形成层上，加压辊的一侧的加压辊的弯曲表面沿加压辊的弯曲表面弯曲并收集。 在元件形成层和剥离层之间产生剥离，并且元件形成层被转印到膜上。 通过喷嘴将液体顺序地供给到通过剥离产生的元件形成层和剥离层之间的间隙，使得在元件形成层和剥离层的表面上产生的电荷被液体扩散。

公开(公告)号：US09570329B2

公开(公告)日：2017-02-14

申请号：US15204091

申请日：2016-07-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC: H01L31/18 ,  H01L21/67 ,  H01L27/12 ,  H01L21/683 ,  B32B43/00 ,  H01L31/20

CPC classification number: H01L27/1266 ,  B32B43/006 ,  G02F1/1303 ,  G02F1/13306 ,  G06K19/0772 ,  H01L21/67132 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/156 ,  H01L31/1892 ,  H01L31/206 ,  H01L33/005 ,  H01L51/003 ,  H01L51/0097 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2221/68395 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/19041 ,  H01L2924/30105 ,  Y10T29/41

Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

Abstract translation: 为了在从用于制造半导体元件的基板剥离包含半导体元件的元件形成层而被除去形成有元件形成层和剥离层的基板和薄膜之间的间隙中时，为了消除放电， 加压辊。 该膜附着在加压辊之间的元件形成层上，加压辊的一侧的加压辊的弯曲表面沿加压辊的弯曲表面弯曲并收集。 在元件形成层和剥离层之间产生剥离，并且元件形成层被转印到膜上。 通过喷嘴将液体顺序地供给到通过剥离产生的元件形成层和剥离层之间的间隙，使得在元件形成层和剥离层的表面上产生的电荷被液体扩散。

公开(公告)号：US08610152B2

公开(公告)日：2013-12-17

申请号：US13688809

申请日：2012-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi ,  Shunpei Yamazaki

IPC: H01L33/00

CPC classification number: H01L31/0232 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/1277 ,  H01L27/1462 ,  H01L31/02162 ,  H01L2224/11

Abstract: A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color.

Abstract translation: 提供了其中由外部应力引起的诸如裂纹，凹陷或凹痕的损伤减小的半导体器件。 此外，具有小厚度的半导体器件的产量增加。 半导体器件包括具有台阶侧表面的透光衬底，其宽度在台阶之上的部分中并且更接近一个表面的透光衬底小于在该阶梯下方的部分的透光衬底;设置在另一表面上的半导体元件层 以及覆盖透光性基板的一侧面和一部分的第一透光性树脂层和第二透光性树脂层的层叠体。 第一透光树脂层和第二透光树脂层中的一个具有彩色。