Invention Grant
- Patent Title: Cobalt interconnect techniques
- Patent Title (中): 钴互连技术
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Application No.: US14798996Application Date: 2015-07-14
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Publication No.: US09472502B1Publication Date: 2016-10-18
- Inventor: Ya-Ling Lee , Wen-Cheng Yang , Victor Y. Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H01L23/522 ; H01L23/528
Abstract:
Some embodiments relate to a method of manufacturing an integrated circuit device. In this method a dielectric layer is formed over a substrate. The dielectric layer comprises an opening arranged within the dielectric layer. A first cobalt liner is formed along bottom and sidewall surfaces of the opening. A barrier liner is formed on exposed surfaces of the first cobalt liner. A bulk cobalt layer is formed in the opening and over the barrier liner to fill a remaining space of the opening.
Information query
IPC分类:
