Invention Grant
- Patent Title: Cascoded semiconductor devices
- Patent Title (中): Cascoded半导体器件
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Application No.: US14056648Application Date: 2013-10-17
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Publication No.: US09472549B2Publication Date: 2016-10-18
- Inventor: Matthias Rose , Jan Sonsky , Philip Rutter
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP12194083 20121123
- Main IPC: H01H47/00
- IPC: H01H47/00 ; H01L27/088 ; H01L27/08 ; H03K17/567 ; H03K17/687 ; H03K17/74
Abstract:
A cascoded power semiconductor circuit has a clamp circuit between the source and gate of a gallium nitride or silicon carbide FET to provide avalanche protection for the cascode MOSFET transistor.
Public/Granted literature
- US20140145208A1 CASCODED SEMICONDUCTOR DEVICES Public/Granted day:2014-05-29
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