Invention Grant
- Patent Title: Diode biased body contacted transistor
- Patent Title (中): 二极管偏置体接触晶体管
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Application No.: US14182459Application Date: 2014-02-18
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Publication No.: US09472570B2Publication Date: 2016-10-18
- Inventor: Alan B. Botula , Randy L. Wolf
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Michael LeStrange; Andrew M. Calderon
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/06 ; H01L29/66 ; H01L21/768 ; H01L21/84 ; H01L23/528 ; H01L27/07 ; H01L29/861 ; H01L29/423
Abstract:
Approaches for body contacted transistors are provided. A method of manufacturing a semiconductor structure includes forming a field effect transistor (FET) including a channel and a gate. The method also includes forming a diode that is electrically connected between the channel and the gate, wherein the diode and channel are contained in a same layer of material.
Public/Granted literature
- US20150236040A1 DIODE BIASED BODY CONTACTED TRANSISTOR Public/Granted day:2015-08-20
Information query
IPC分类:
