Invention Grant
US09478427B2 Semiconductor structures having low resistance paths throughout a wafer
有权
在整个晶片上具有低电阻路径的半导体结构
- Patent Title: Semiconductor structures having low resistance paths throughout a wafer
- Patent Title (中): 在整个晶片上具有低电阻路径的半导体结构
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Application No.: US14832019Application Date: 2015-08-21
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Publication No.: US09478427B2Publication Date: 2016-10-25
- Inventor: Jeffrey P. Gambino , Thomas J. Hartswick , Zhong-Xiang He , Anthony K. Stamper , Eric J. White
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Stevens Meyers; Andrew M. Calderon
- Main IPC: H01L23/485
- IPC: H01L23/485 ; H01L23/522 ; H01L21/288 ; H01L21/768 ; H01L21/78 ; H01L23/532 ; H01L21/3205 ; H01L21/285 ; H01L23/58 ; H01L23/528

Abstract:
A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path.
Public/Granted literature
- US20150364416A1 SEMICONDUCTOR STRUCTURES HAVING LOW RESISTANCE PATHS THROUGHOUT A WAFER Public/Granted day:2015-12-17
Information query
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