公开(公告)号：US10589991B2

公开(公告)日：2020-03-17

申请号：US15894119

申请日：2018-02-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00 ,  G06F17/50 ,  B81B3/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

公开(公告)号：US10438803B2

公开(公告)日：2019-10-08

申请号：US14832024

申请日：2015-08-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino ,  Thomas J. Hartswick ,  Zhong-Xiang He ,  Anthony K. Stamper ,  Eric J. White

IPC: H01L21/768 ,  H01L21/288 ,  H01L21/78 ,  H01L23/522 ,  H01L23/00 ,  H01L23/485 ,  H01L23/532 ,  H01L21/3205 ,  H01L21/285 ,  H01L23/58 ,  H01L23/528 ,  C25D7/12 ,  C25D3/38 ,  C25D5/10

Abstract: A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path.

公开(公告)号：US20160264410A1

公开(公告)日：2016-09-15

申请号：US15162997

申请日：2016-05-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/09 ,  B81C1/00047 ,  B81C1/00269 ,  B81C1/00365 ,  B81C1/00531 ,  B81C1/00936 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0121 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0714 ,  G06F17/5009

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

公开(公告)号：US20140291802A1

公开(公告)日：2014-10-02

申请号：US13853301

申请日：2013-03-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Shawn A. Adderly ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Matthew D. Moon ,  Anthony C. Speranza ,  Timothy D. Sullivan ,  David C. Thomas ,  Eric J. White

IPC: H01L23/498 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L23/53223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are semiconductor structures with metal lines and methods of manufacture which reduce or eliminate extrusion formation. The method includes forming a metal wiring comprising a layered structure of metal materials with an upper constraining layer. The method further includes forming a film on the metal wiring which prevents metal extrusion during an annealing process.

Abstract translation: 公开了具有金属线的半导体结构和制造方法，其减少或消除挤出形成。 该方法包括形成金属布线，该金属布线包括具有上部约束层的金属材料的层状结构。 该方法还包括在金属布线上形成膜，该膜在退火过程中防止金属挤出。

公开(公告)号：US10589992B2

公开(公告)日：2020-03-17

申请号：US15923013

申请日：2018-03-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00 ,  G06F17/50 ,  B81B3/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

公开(公告)号：US20180179052A1

公开(公告)日：2018-06-28

申请号：US15894119

申请日：2018-02-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00 ,  G06F17/50 ,  B81B3/00

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/09 ,  B81C1/00047 ,  B81C1/00269 ,  B81C1/00365 ,  B81C1/00531 ,  B81C1/00936 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0121 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0714 ,  G06F17/5009

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

公开(公告)号：US09691623B2

公开(公告)日：2017-06-27

申请号：US15178893

申请日：2016-06-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino ,  Thomas J. Hartswick ,  Zhong-Xiang He ,  Anthony K. Stamper ,  Eric J. White

IPC: H01L23/58 ,  H01L21/288 ,  H01L21/768 ,  H01L21/78 ,  H01L23/522 ,  H01L23/00 ,  H01L23/485 ,  H01L23/532 ,  H01L21/3205 ,  H01L21/285 ,  H01L23/528 ,  C25D7/12 ,  C25D3/38 ,  C25D5/10

CPC classification number: H01L21/2885 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/288 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76885 ,  H01L21/76886 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/585 ,  H01L24/95 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path.

公开(公告)号：US09620371B2

公开(公告)日：2017-04-11

申请号：US14832021

申请日：2015-08-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino ,  Thomas J. Hartswick ,  Zhong-Xiang He ,  Anthony K. Stamper ,  Eric J. White

IPC: H01L21/78 ,  H01L21/768 ,  H01L23/58 ,  H01L21/288 ,  H01L23/522 ,  H01L23/485 ,  H01L23/532 ,  H01L21/3205 ,  H01L21/285 ,  H01L23/528 ,  C25D7/12 ,  C25D3/38 ,  C25D5/10

CPC classification number: H01L21/2885 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/288 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76885 ,  H01L21/76886 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/585 ,  H01L24/95 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path.

公开(公告)号：US20160264405A1

公开(公告)日：2016-09-15

申请号：US15162988

申请日：2016-05-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/09 ,  B81C1/00047 ,  B81C1/00269 ,  B81C1/00365 ,  B81C1/00531 ,  B81C1/00936 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0121 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0714 ,  G06F17/5009

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

公开(公告)号：US09159671B2

公开(公告)日：2015-10-13

申请号：US14083929

申请日：2013-11-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen Chen ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Trevor A. Thompson ,  Eric J. White

IPC: H01L21/4763 ,  H01L23/498 ,  H01L21/445 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The method further includes removing the mask. The method still further includes forming spacers on sides of the conductive material. The method additionally includes forming a dielectric film on surfaces of the cap layer and the sidewall spacers.

Abstract translation: 提供了在集成电路中制造铜线的方法。 制造半导体结构的方法包括在掩模中形成线开口。 该方法还包括在导线开口中电镀导电材料。 该方法还包括在导电材料上形成盖层。 该方法还包括去除掩模。 该方法还包括在导电材料的侧面上形成间隔物。 该方法还包括在盖层和侧壁间隔物的表面上形成电介质膜。