Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US15152139Application Date: 2016-05-11
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Publication No.: US09478527B2Publication Date: 2016-10-25
- Inventor: Kenji Ozeki , Tomonori Miyoshi
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Squire Patton Boggs (US) LLP
- Priority: JP2013-272592 20131227
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L25/075 ; H01L33/62 ; H01L33/54 ; H01L33/60 ; H01L33/50 ; H01L33/56 ; H01L33/48

Abstract:
A light emitting device includes a substrate, a light emitting element mounted on the substrate, a light transmissive member placed on an upper surface of the light emitting element, and a sealing member which seals the light emitting element and the light transmissive member. The light transmissive member is a plate-shaped member not containing a phosphor and is larger than the light emitting element when viewed from above. The sealing member includes a first sealing member which is formed of a light reflecting member for reflecting light emitted from the light emitting element and covers side surfaces of the light emitting element, and a second sealing member which contains a phosphor for converting the light emitted from the light emitting element into light having wavelength different from wavelength of the light emitted from the light emitting element and covers at least an upper surface of the light transmissive member.
Public/Granted literature
- US20160254254A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2016-09-01
Information query
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