Invention Grant
- Patent Title: Semiconductor devices, semiconductor device packages, and packaging techniques for impedance matching and/or low frequency terminations
- Patent Title (中): 用于阻抗匹配和/或低频端接的半导体器件，半导体器件封装和封装技术
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Application No.: US14184266Application Date: 2014-02-19
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Publication No.: US09484222B2Publication Date: 2016-11-01
- Inventor: Hussain H. Ladhani , Lu Li , Mahesh K. Shah , Lakshminarayan Viswanathan , Michael E. Watts
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L27/08 ; H01L21/48 ; H03F3/193 ; H03F3/21 ; H01L25/00 ; H01L23/66 ; H03F1/56 ; H03F3/195
Abstract:
A semiconductor device, related package, and method of manufacturing same are disclosed. In at least one embodiment, the semiconductor device includes a radio frequency (RF) power amplifier transistor having a first port, a second port, and a third port. The semiconductor device also includes an output lead, a first output impedance matching circuit between the second port and the output lead, and a first additional circuit coupled between the output lead and a ground terminal. At least one component of the first additional circuit is formed at least in part by way of one or more of a plurality of castellations and a plurality of vias.
Public/Granted literature
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