Invention Grant
- Patent Title: LED structures for reduced non-radiative sidewall recombination
- Patent Title (中): 用于减少非辐射侧壁复合的LED结构
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Application No.: US14853614Application Date: 2015-09-14
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Publication No.: US09484492B2Publication Date: 2016-11-01
- Inventor: David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L33/06 ; H01L33/38 ; H01L33/30
Abstract:
LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
Public/Granted literature
- US20160197232A1 LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION Public/Granted day:2016-07-07
Information query
IPC分类:
