Invention Grant
- Patent Title: Self-aligned airgap interconnect structures
- Patent Title (中): 自对准气隙互连结构
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Application No.: US14505087Application Date: 2014-10-02
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Publication No.: US09490202B2Publication Date: 2016-11-08
- Inventor: Qinghuang Lin , Benjamin L. Fletcher , Cyril Cabral
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent David Cain
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/00 ; H01L23/522 ; H01L23/482 ; H01L23/528 ; H01L23/00 ; H01L21/311 ; H01L21/768 ; H01L23/532

Abstract:
Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material, Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.
Public/Granted literature
- US20150054122A1 METHOD FOR FORMING SELF-ALIGNED AIRGAP INTERCONNECT STRUCTURES Public/Granted day:2015-02-26
Information query
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